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About This Product
The Samsung SSD 850 EVO. The top SSD for top professionals.
3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
TurboWrite Technology
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.
RAPID Mode
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
Enhanced Endurance and Reliability
Specifications
M.2
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
250 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
Up to 500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM
Full Specifications
M.2
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Yes
250 GB (1GB=1 Billionbyte by IDEMA) *
*Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Up to 540 MB/sec Sequential Read *
*Performance may vary based on system hardware & configuration
Up to 500 MB/sec Sequential Write *
*Performance may vary based on system hardware & configuration
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
* Performance may vary based on system hardware & configuration
Random Write (4KB, QD32): Up to 89,000 IOPS Random Write *
*Performance may vary based on system hardware & configuration
Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
* Performance may vary based on system hardware & configuration
Samsung 32 layer 3D V-NAND
Samsung 512 MB Low Power DDR3 SDRAM
Samsung MGX Controller
Yes
AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
Yes
Auto Garbage Collection Algorithm
World Wide Name supported
Yes
50 mWatts
* Actual power consumption may vary depending on system hardware & configuration
Average: 2.4 Watts *Maximum: 3.7 Watts (Burst mode)
* Actual power consumption may vary depending on system hardware & configuration
5V ± 5% Allowable voltage
1.5 Million Hours Reliability (MTBF)
32ºF - 158ºF
1,500G & 0.5ms (Half sine)
M.2
3.16" x 0.87" x 0.06"
0.27 lb.
Magician Software